Characterization of a 4H-SiC High Power Density Controlled Current Limiter

High Performance Ultraviolet 4H-SiC Avalanche Photodiodes

Development of High Quality 4H-SiC Thick Epitaxy for Reliable High Power Electronics Using Halogenated Precursors

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Modeling and Characterization of 4h-sic Mosfets: High Field, High Temperature, and Transient Effects

Title of Dissertation: MODELING AND CHARACTERIZATION OF 4H-SIC MOSFETS: HIGH FIELD, HIGH TEMPERATURE, AND TRANSIENT EFFECTS Siddharth Potbhare, Doctor of Philosophy, 2008 Directed by: Professor Neil Goldsman Department of Electrical and Computer Engineering We present detailed physics based numerical models for characterizing 4HSilicon Carbide lateral MOSFETs and vertical power DMOSFETs for hig...

Design, Modeling, and Characterization of Power MOSFET in 4H-SiC for Extreme Environment Applications

Silicon Carbide (SiC) is an emerging technology for extreme environment electronics applications. In this paper, an analytical model for vertical DIMOS transistor structure in SiC is presented. The model takes into account the various short channel effects in the DIMOS channel region as well as the velocity saturation effect in the drift region. A good agreement between the analytical model and...

Epitaxial Growth and Characterization of SiC for High Power Devices

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